Bài báo khoa học

In this paper, we study the interaction between the electromagnetic fields and electron in semiconductors based on the GaAs/InAs/GaAs quantum well structures with a three levels Lambda configuration. The Lambda configuration includes two lower levels in the valence band and an upper level in the conduction band. We calculate the absorption coefficient in the semiconductor quantum well in the presence of two laser fields of different frequencies, one is called the probe field, the other is called the coupling field. From the obtained results, we determine the values of the Rabi frequencies, frequency detuning of the probe field and the coupling field. The results show that with an energy spectrum of the Lambda-configuration appears a transparent window for the probe laser beam. The depth and width or position of the window can be altered by changing the intensity of the coupling laser field.